sip32101, sip32102, sip32103 www.vishay.com vishay siliconix s15-0598-rev. g, 30-mar-15 1 document number: 62617 for technical questions, contact: powerictechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 6.5 m , bi-directional battery switch in compact wcsp description the sip32101, sip32102, and sip32103 bidirectional switches feature reverse blocking capability to isolate the battery from the system. the inte rnal switch has an ultra-low 6.5 m (typ at 3.3 v) on-resistance and operates from a +2.3 v to +5.5 v input voltage range, making the devices ideal battery-disconnect switches for high-capacity battery applications. the sip32101, sip32102, and sip32103 have slew rate control, making them ideal in large load capacitor as well as high-current load switching applications. these devices are also highly efficient, consuming a mere 10 pa (typ.) current in shutdown and 15 pa while operating. the sip32101 and sip32103 have an active low enable and the sip32102 has an active high enable. they can interface directly with a low voltage control signal. the sip32101, sip32102, and sip32103 are available in an ultra compact 12-bump, 1.3 mm x 1.7 mm, 0.4 mm pitch wcsp package with top side lamination. the device operates over the temperature of -40 c to +85 c. features ? bi-directional on and off ? 7 a continuous current capability ? ultra low r on , 6.5 m (typ.) at 3.3 v ? wide input voltage, 2.3 v to 5.5 v ? slew rate controlled turn on ? ultra-low quiescent current: 15 pa (sip32101, sip32102) ? en pin with integrated pull up or pull down resistor ? available in both logic high and logic low enable options ? compact 12-bump, 1.3 mm x 1.7 mm x 0.55 mm wcsp package ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? smartphones and tablets ? digital still / video cameras ? portable meters an d test instruments ? communication devices with embedded batteries ? portable medical an d healthcare systems ? data storage ? battery bank typical application circuit fig. 1 - typical application circuit note ? ge1 denotes halogen-fr ee and rohs-compliant marking ordering information part number marking enable enable pull resistor package temperature sip32101db-t1-ge1 32101 low enable pull low 12-bump, 1.3 mm x 1.7 mm, 0.4 mm pitch wcsp package -40 c to +85 c sip32102db-t1-ge1 32102 high enable pull low sip32102db-t5-ge1 32102 high enable pull low sip32103db-t1-ge1 32103 low enable pull high sip32101evb - - - evaluation board - sip32102evb - - - - SIP32103EVB - - - - port a port b to battery pack s y s tem power input charger output s y s tem charging block charging control and regulator s y s tem connector power input s lew rate g ate drive logic level s hift g nd en, en s ip32101, s ip32102 1234 a b c fywl 3 2101
sip32101, sip32102, sip32103 www.vishay.com vishay siliconix s15-0598-rev. g, 30-mar-15 2 document number: 62617 for technical questions, contact: powerictechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. negative current injection up to 300 ma. b. all bumps soldered to 1 inch x 1 in ch, 2 oz. copper, 4 layers pc board. c. derate 13.7 mw/c above t a = 70 c. stresses beyond those listed under "absolute maximum ratings" ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating/conditions for extended peri ods may affect de vice reliability. notes a. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. typical values are for design aid only, not guaranteed nor subject to production testing. c. for v in outside this rang e consult typical en , en threshold curve. absolute maximum ratings parameter conditions limit unit v pa , v pb reference to gnd -0.3 to +6 v pulse at 1 ms re ference to gnd a -1.6 v en reference to gnd -0.3 to +6 maximum continuous switch current 7 a maximum pulse current 100 s pulse 15 esd (hbm) 8000 v operating temperature -40 to +85 c operating junction temperature 125 storage temperature -65 to +150 thermal resistance ( ja ) b 73 c/w power dissipation (p d ) b, c t a = 70 c 1096 mw specifications parameter symbol test conditions unless specified limits unit v in = v pa /v pb = 2.3 v to 5.5 v, t a = -40 c to 85 c (typical values are at v pa , v pb = 4.2 v, c pa , c pb = 0.1 f, t a = 25 c) min. a typ. b max. a power supply operating voltage c v pa/pb 2.3 - 5.5 v quiescent current i q v en = 0 v (for sip32101), v en = v in (for sip32102), no load - 0.015 300 na v en = 0 v (for sip32103), no load - 8.2 15 a shutdown current i shdn v en = v in (for sip32101), v en = 0 v (for sip32102), no load - 0.010 300 na internal fet on-resistance r ds(on) v pa /v pb = 2.3 v, i l = 500 ma, t a = 25 c - 8 13 m v pa /v pb = 3.3 v, i l = 500 ma, t a = 25 c - 6.5 10 control en / en input logic-low voltage c v il --0.4 v en / en input logic-high voltage c v ih 1.4 - - en / en pull resistor r en v pa /v pb = 5.5 v, v en (or v en ) = 2.3 v - 500 700 k timing output turn-on delay time t d(on) v in = 4.2 v, r l = 100 , c l = 0.1 f, t a = 25 c -0.5- ms output turn-on rise time t r -1- output turn-off delay time t d(off) -2.4- output turn-off fall time t f -1-
sip32101, sip32102, sip32103 www.vishay.com vishay siliconix s15-0598-rev. g, 30-mar-15 3 document number: 62617 for technical questions, contact: powerictechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 bump configuration fig. 2 - wcsp12, 1.3 mm x 1.7 mm functional block diagram bump description bump number name function a1, b1, a3, b3, c3 pb power port b c1 gnd ground a2, b2, c2, b4, c4 pa power port a a4 en / en switch enable input, active low for sip 32101 and sip32103, active high for sip32102 top view ( s older bump s on bottom) a1 c3 b3 a3 c2 b2 a2 c1 b1 /en port a 1234 a c b c4 b4 a4 gnd port a port a port a port a port b port b port b port b port b internal bias circuit slew rate gate drive logic level shift gnd en, sip32101 en, sip32102 port b sip32101, sip32102 port a internal bias circuit slew rate gate drive logic level shift gnd en, sip32101 port b sip32103 port a
sip32101, sip32102, sip32103 www.vishay.com vishay siliconix s15-0598-rev. g, 30-mar-15 4 document number: 62617 for technical questions, contact: powerictechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (internally regulated 25 c, unless otherwise noted) fig. 3 - quiescent vs. input voltage fig. 4 - quiescent vs. input voltage fig. 5 - shutdown current vs. input voltage fig. 6 - quiescent vs. temperature fig. 7 - quiescent vs. temperature fig. 8 - on resist ance vs. temperature 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 - q uie s cent current (na) v pa /v pb (v) i q pa /i q pb s ip32101, s ip32102 0 2 4 6 8 10 12 14 16 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i q pa / i q pb - q uie s cent current ( a) v pa /v pb (v) v = 0 v ( s ip32103) en 0.00 0.02 0.04 0.06 0.08 0.10 0.12 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i s hdn-pa /i s hdn-pb - s hutdown current (na) v pa /v pb (v) v v= pa /v pb ( s ip32101, s ip32102) en 0.01 0.10 1.00 10.00 - 40 - 15 10 35 60 85 i q pa /i q pb - q uie s cent current (na) temperature ( c) v pa /v pb = 5.0 v v pa /v pb = 2.7 v v pa /v pb = 4.2 v s ip32101, s ip32102 0 2 4 6 8 10 12 14 16 - 40 - 15 10 35 60 85 i q pa /i q pb - q uie s cent current (a) temperature ( c) v pa /v pb = 5.0 v v pa /v pb = 2.7 v v pa /v pb = 4.2 v v = 0 v ( s ip32103) en 2 3 4 5 6 7 8 9 10 - 40 - 15 10 35 60 85 r d s - on-re s i s tance (m) temperature ( c) i l = 0.5 a v pa /v pb = 4.2 v
sip32101, sip32102, sip32103 www.vishay.com vishay siliconix s15-0598-rev. g, 30-mar-15 5 document number: 62617 for technical questions, contact: powerictechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (internally regulated 25 c, unless otherwise noted) fig. 9 - shutdown current vs.temperature fig. 10 - on resistance vs. input voltage fig. 11 - en pull down re sistance vs. temperature fig. 12 - normalized on resistance vs. load current fig. 13 - reverse blocking current (i rb ) vs. output voltage fig. 14 - rise time vs. temperature 0.001 0.01 0.1 1 10 - 40 - 15 10 35 60 85 i s hdn-pa /i s hdn - pb - s hutdown current (na) temperature ( c) v pa /v pb = 2.7 v v pa /v pb = 5 v v pa /v pb = 4.2 4 5 6 7 8 9 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 r d s - on-re s i s tance (m) v pa /v pb (v) i l = 0.5 a 400 420 440 460 480 500 520 540 560 580 600 - 40 - 15 10 35 60 85 r /en - /en pull down / pull up re s i s tance (k ) temperature ( c) v = 2.3 v v pa /v pb = 5.5 v en 0.95 1 1.05 1.1 1.15 1234567 r d s (norm) - normalized on - re s i s tance i out (a) t a = 25 c v pa /v pb = 2.7 v v pa /v pb = 3.3 v v pa /v pb = 4.35 v v pa /v pb = 5 v - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 i pb /i pa - input current (na) v pa /v pb (v) v pb /v pa = 2.3 v 0.80 0.90 1.00 1.10 1.20 1.30 - 40 - 15 10 35 60 85 t r - ri s e time (m s ) temperature ( c) v pa /v pb = 4.2 v c l = 0.1 f r l = 10
sip32101, sip32102, sip32103 www.vishay.com vishay siliconix s15-0598-rev. g, 30-mar-15 6 document number: 62617 for technical questions, contact: powerictechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (internally regulated 25 c, unless otherwise noted) fig. 15 - en , en threshold voltage vs. input voltage fig. 16 - turn-on delay time vs. temperature fig. 17 - turn-off delay time vs. temperature fig. 18 - fall time vs. temperature 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 2.0 3.0 4.0 5.0 6.0 en, en - thre s hold voltage (v) v pa / v pb (v) v ih v il 0.4 0.45 0.5 0.55 0.6 0.65 0.7 - 40 - 15 10 35 60 85 t d(on) - turn-on delay time (m s ) temperature ( c) v pa /v pb = 4.2 v c l = 0.1 f 1.8 2.0 2.2 2.4 2.6 2.8 3.0 - 40 - 15 10 35 60 85 t d(off) - turn-off delay time (m s ) temperature ( c) v pa /v pb = 4.2 v c l = 0.1 f r l = 10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 40 - 15 10 35 60 85 t f - fall time (m s ) temperature ( c) v pa /v pb = 4.2 v c l = 0.1 f r l = 10
sip32101, sip32102, sip32103 www.vishay.com vishay siliconix s15-0598-rev. g, 30-mar-15 7 document number: 62617 for technical questions, contact: powerictechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 detailed description the sip32101, sip32102, and sip32103 bidirectional switches feature reverse blocking capability to isolate the battery from the system. the inte rnal switch has an ultra-low 6.5 m (typ. at 3.3 v) on-resistance and operates from a +2.3 v to +5.5 v input voltage range, making the device ideal battery-disconnect switch for high-capacity battery applications. the parts can handle 7 a continuous current at both directions. the sip32101, sip32102, and sip32103 have slew rate control, making them ideal in large load capacitor as well as high-current load switching applications. the sip32101, sip32102, and sip32103 are available in an ultra compact 12-bump, 1.3 mm x 1.7 mm, 0.4 mm pitch wcsp package with top side lamination. the device operates over the temperature of -40 c to +85 c. reverse current blocking the sip32101, sip32102, and sip32103 are bidirectional switches that prevent current flowing from either port to the other when the device is disabled. en , en input sip32101 and sip32103 have an active-low enable pin which can interface with low voltage gpio directly. the switch is on when en is low and off when en is high. the sip32102 has an active-high enable pin that turns the switch on when high and off when low. the sip32101 and sip32102 have an integrated pull down resistor at en pin. the sip32103 en pin integrates a pull up resistor that will automatically connected to eith er port a or port whichever is of higher voltage. switch on and off performance the sip32101, sip32102, and sip32103 have slew rate control. this minimizes the inrush current and provides a soft turn on. fig. 19 - port b turn-on time (v pa = 4.2 v, r l = 10 , c l = 0.1 f) fig. 20 - port b turn-off time (v pa = 4.2 v, r l = 10 , c l = 0.1 f) device pin out device pin out is design ed for ease of layout. fig. 21 - proposed layout vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62617 . ) /en gnd a1 c3 b3 a3 c2 b2 a2 c1 b1 /en port a c4 b4 a4 gnd port a port a port a port a port b port b port b port b port b port a port b current
package information www.vishay.com vishay siliconix revision: 16-dec-13 1 document number: 62592 for technical questions, contact: powerictechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 wcsp12: 12 bumps (3 x 4, 0.4 mm pitch, 208 m bump heig ht, 1.71 mm x 1. 31 mm die size) notes (unless otherwise specified) (1) laser mark on the silicon die back coated with an epoxy film. (2) bumps are sac396. (3) 0.050 max. co-planarity. (4) laminate tape thic kness is 0.022 mm. (5) use millimeters as the primary measurement. millimeters (5) inches dimension min. nom. max. min. nom. max. a 0.515 0.530 0.545 0.0203 0.0209 0.0215 a1 0.183 0.208 0.233 0.0072 0.0082 0.0092 b 0.234 0.260 0.312 0.0092 0.0102 0.0123 e 0.400 0.0157 s 0.235 0.255 0.275 0.0093 0.0100 0.0108 d 1.270 1.310 1.350 0.0500 0.0516 0.0531 e 1.670 1.710 1.750 0.0657 0.0673 0.0689 ecn: s13-2510-rev. b, 16-dec-13 dwg: 6017 e s e s s e s e e b d e fywl abcde index bump a1 a1 b1 c1 a2 a3 a4 b2 b3 b4 c2 c3 c4 top view bottom view a a1 side view note 3 bump note 2 note 4 recommended land pattern (nsmd) e e e a1 e e
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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